Online Webinar: GaN and SiC – The Future of Power Electronics
Wide band-gap materials such as gallium nitride (GaN) and silicon carbide (SiC) open up new possibilities in efficiency and performance that are not achievable with conventional silicon. Learn more about their technical properties, the architecture of GaN FETs, and current market trends.
Webinar schedule
Datum:
2. December 2026
Zeit:
12.00 – 12.45 pm
Language:
german
Location:
online
Cost:
free of charge
Webinar objectives
After the webinar, participants will have acquired the following knowledge and competencies:
- Understanding of the technical details of wide band-gap materials
- Knowledge of the structure of a GaN FET
- Familiarity with a practical application of GaN
- Awareness of market developments
Target Audience
- Electronics Engineers
- Technicians
- Product Developers(Electronics)
Speaker
Niklaus Fäh
Expert Electronic Engineer
- Experience in the development of medical devices
- Extensive design experience in power management
- Member of the internal company advisory board
Katharina Maul
Senior Regulatory Affairs & Quality Manager
- BSc in Biomedical Engineering
- 7+ years’ experience in medical technology
- Specialist in IEC 62366-1 Usability Engineering
- Specialist in ISO 27001 Information Security Management (ISMS)